Semiconductor material and device characterization pdf download

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semiconductor material and device characterization pdf download

Semiconductor Material and Device Characterization, 3rd Edition

Key ingredients of this technological dominance have been the rapid advances made in the quality and processing of materials — semiconductors, conductors and dielectrics — which have given metal oxide semiconductor device technology its important characteristics of negligible standby power dissipation, good input—output isolation, surface potential control and reliable operation. However, when assessing material quality and device reliability, it is important to have fast, nondestructive, accurate and easy-to-use electrical characterization techniques available, so that important parameters such as carrier doping density, type and mobility of carriers, interface quality, oxide trap density, semiconductor bulk defect density, contact and other parasitic resistances and oxide electrical integrity can be determined. This chapter describes some of the more widely employed and popular techniques that are used to determine these important parameters. The techniques presented in this chapter range in both complexity and test structure requirements from simple current—voltage measurements to more sophisticated low-frequency noise, charge pumping and deep-level transient spectroscopy techniques. Skip to main content.
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Published 23.12.2018

Semiconductor Material and Device Characterization

Electrical Characterization of Semiconductor Materials and Devices

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However, when assessing material quality and device reliability, it is important to have fast, nondestructive, accurate and easy-to-use electrical characterization techniques available, so that important parameters such as carrier doping density, type and mobility of carriers, interface quality, oxide trap density, semiconductor bulk defect density, contact and other parasitic resistances and oxide electrical integrity can be determined. This chapter describes some of the more widely employed and popular techniques that are used to determine these important parameters. The techniques presented in this chapter range in both complexity and test structure requirements from simple current—voltage measurements to more sophisticated low-frequency noise, charge pumping and deep-level transient spectroscopy techniques.
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